Making metal–halide perovskites useful in planar devices through a new hybrid structure

Two of the main drawbacks of using tin (Sn)-based metal halide perovskites (MHPs) in thin-film transistors have been simultaneously solved by an innovative hybrid 2D/3D structure. New findings will help unlock the potential of environmentally benign Sn-based MHPs in CMOS technology, paving the way for flexible and printable electronic devices.

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